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path: root/drivers/mtd/nand/nand_base.c
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Diffstat (limited to 'drivers/mtd/nand/nand_base.c')
-rw-r--r--drivers/mtd/nand/nand_base.c15
1 files changed, 15 insertions, 0 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 85891dcc27ad..4a7b86423ee9 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -347,6 +347,9 @@ static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip)
struct nand_chip *chip = mtd->priv;
u16 bad;
+ if (chip->options & NAND_BB_LAST_PAGE)
+ ofs += mtd->erasesize - mtd->writesize;
+
page = (int)(ofs >> chip->page_shift) & chip->pagemask;
if (getchip) {
@@ -396,6 +399,9 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
uint8_t buf[2] = { 0, 0 };
int block, ret;
+ if (chip->options & NAND_BB_LAST_PAGE)
+ ofs += mtd->erasesize - mtd->writesize;
+
/* Get block number */
block = (int)(ofs >> chip->bbt_erase_shift);
if (chip->bbt)
@@ -2933,6 +2939,15 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
if (*maf_id != NAND_MFR_SAMSUNG && !type->pagesize)
chip->options &= ~NAND_SAMSUNG_LP_OPTIONS;
+ /*
+ * Bad block marker is stored in the last page of each block
+ * on Samsung and Hynix MLC devices
+ */
+ if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ (*maf_id == NAND_MFR_SAMSUNG ||
+ *maf_id == NAND_MFR_HYNIX))
+ chip->options |= NAND_BB_LAST_PAGE;
+
/* Check for AND chips with 4 page planes */
if (chip->options & NAND_4PAGE_ARRAY)
chip->erase_cmd = multi_erase_cmd;