diff options
| author | Ahmed Naseef <naseefkm@gmail.com> | 2025-12-09 11:16:02 +0400 |
|---|---|---|
| committer | Miquel Raynal <miquel.raynal@bootlin.com> | 2025-12-16 09:13:46 +0100 |
| commit | a75a1dec037ff3de863375fa3a74569619667184 (patch) | |
| tree | c1ec15888db61b030c80c28241d566e6d9332529 /include/linux/mtd | |
| parent | 8f0b4cce4481fb22653697cced8d0d04027cb1e8 (diff) | |
mtd: spinand: add support for Dosilicon DS35Q1GA/DS35M1GA
Add support for Dosilicon DS35Q1GA (3.3V) and DS35M1GA (1.8V) SPI NAND.
These are 1Gbit (128MB) devices with:
- 2048 byte pages + 64 byte OOB
- 64 pages per block, 1024 blocks
- On-die 4-bit ECC per 512 byte sector
The 64-byte OOB area is divided into 4 segments of 16 bytes, with each
segment containing 8 bytes of user data (M2+M1) and 8 bytes of ECC
parity (R1). This provides 30 bytes of usable OOB space after reserving
2 bytes for the bad block marker.
Tested on Genexis Platinum 4410 (EcoNet EN751221) by writing known
patterns to OOB and verifying ECC parity placement in R1 regions.
Datasheet:
https://www.dosilicon.com/resources/SPI%20NAND/DS35X1GAXXX_rev08.pdf
Signed-off-by: Ahmed Naseef <naseefkm@gmail.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Diffstat (limited to 'include/linux/mtd')
| -rw-r--r-- | include/linux/mtd/spinand.h | 1 |
1 files changed, 1 insertions, 0 deletions
diff --git a/include/linux/mtd/spinand.h b/include/linux/mtd/spinand.h index ce76f5c632e1..c50a43b447d2 100644 --- a/include/linux/mtd/spinand.h +++ b/include/linux/mtd/spinand.h @@ -354,6 +354,7 @@ struct spinand_manufacturer { /* SPI NAND manufacturers */ extern const struct spinand_manufacturer alliancememory_spinand_manufacturer; extern const struct spinand_manufacturer ato_spinand_manufacturer; +extern const struct spinand_manufacturer dosilicon_spinand_manufacturer; extern const struct spinand_manufacturer esmt_8c_spinand_manufacturer; extern const struct spinand_manufacturer esmt_c8_spinand_manufacturer; extern const struct spinand_manufacturer fmsh_spinand_manufacturer; |